Zirconium doped indium oxide thin films were deposited by the atomic layer deposition technique at 500 degreesC using InCl3, ZrCl4 and water as precursors. The films were characterised by X-ray diffraction, energy dispersive X-ray analysis and by optical and electrical measurements. The films had polycrystalline In2O3 structure. High transparency and resistivity of 3.7 X 10(-4) Omega cm were obtained. (C) 2003 Elsevier Science B.V. All rights reserved.