We have developed a reactive ionized sputtering system, which composed of a conventional planar magnetron (PM) discharge and inductively coupled plasma (ICP), produced with an internal coil antenna. From the investigation on its discharge properties, we have confirmed that: (1) high density ICP of 10(11)-10(12) cm(-3) was successfully produced, (2) the target input power used for sputtering and ICP RF power were independently controllable, (3) the simultaneous operation of PM and ICP were effective for enhancing the ionization, and further excitation of sputtered magnesium atoms. In addition, from the hysteresis observation of reactive sputtering mode, we have confirmed that, the metallic mode sputtering was maintained even for large oxygen flow rate. Preliminary deposition results indicated for the first time that, high crystalline MgO films were deposited at almost the same deposition rate as that of Mg films, under the reactive ionized sputtering condition. (C) 2003 Elsevier Science B.V. All rights reserved.