In this paper, CdxZn1-xTe epilayers with different Cd contents ranging from 0 to 1 were grown on GaAs (10 0) substrates by low-pressure metalorganic vapor-phase epitaxy. The CdxZn1-xTe epilayers were characterized by using the X-ray diffraction, scanning electron microscopy and photoluminescence measurements. When the flow rates of the precursors were kept at constants, the Cd content in the CdxZn1-xTe epilayers decreased with the increase of the substrate temperature. This phenomenon was considered to be related to absorption and desorption characters of the reactants. (C) 2003 Elsevier Science B.V. All rights reserved.