Bi4-xLaxTi3O12 (BLT) thin films with bismuth-layered perovskite structure were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition. The metal acetates were used as the precursor materials and the crystallization of BLT films were conducted by furnace annealing. Structural and electrical properties of BLT films were examined as a function of lanthanum composition. The crystalline structure of BLT films were analyzed by X-ray diffraction and the surface morphology was observed by field emission scanning electron microscopy. The electrical properties (hysteresis loop, Q-V curve and fatigue) of Pt/BLT/Pt capacitors were measured to compare the effect of La doping. The BLT films doped with x=0.75 were found to exhibit higher remanent polarization, lower saturation and coercive voltages, and the enhanced fatigue property than those doped with other La compositions. The remanent polarization and coercive field of BLT films with x=0.75 were 11.1 muC/cm(2) and 64 kV/cm, respectively. (C) 2003 Elsevier Science B.V. All rights reserved.