X-ray diffraction, transmission electron microscopy and Auger spectroscopy were used to study the formation of TiSi2 from a cosputtered (Ti + Si) film with and without TiN capping. In all cases, a metal rich silicide identified as Ti5Si3, was the first phase to form from the amorphous (Ti + Si) regardless if a TiN overlayer was or was not present. At temperatures of 923 K and below it only Ti5Si3 was observed in all specimens. C54 TiSi2 formation is enhanced in specimens having a TiN capping and its formation occurs at lower temperatures and at a faster rate at some appropriate temperature than in specimens without TiN. The effect of tensile stress induced by the TiN layer is suggested as the reason of C54 TiSi2 formation.