Thin Solid Films, Vol.424, No.2, 201-207, 2003
Behaviour of hydrogen impurity in aluminium alloys during anodizing
The present study examines the behaviour of hydrogen impurity in an Al-6.5 at.% W alloy during anodizing, using elastic recoil detection and nuclear reaction analyses. Increased concentrations of hydrogen are found near the alloy/anodic film interface, amounting to similar to 2 X 10(15) H atoms cm(-2) for the particular alloy, containing 0.1-0.3 at.% hydrogen in the bulk regions, and conditions of anodizing. The enrichment arises from hydrogen in the alloy (i) diffusing to the interface, which acts as a trap, or (ii) accumulating at the interface, due to the growth of the anodic film, or a combination of both processes. Diffusion is consistent with the known mobility of hydrogen in aluminium near ambient temperature. Further, accumulation, and subsequent oxidation, of hydrogen are expected based on the general behaviour of alloying elements in anodized aluminium. The anodic films contained similar to0.1-0.3 at.% hydrogen, originating from either the electrolyte or the alloy.