Electron, transport in a submicron-scale AlGaAs/GaAs field-effect transistor with self-assembled InAs nanodots as the floating gate is studied. Both the memory effect in current-voltage I characteristics and the Coulomb oscillations in transconductance are observed due to the electron trapping at nanodot potentials. Random oscillations in the transconductance in the subthreshold region are also observed due to the Coulomb repulsion by the trapped electrons. (C) 2003 American Vacuum Society.