Room-temperature nanoimprint lithography (RT-NIL) technology has been developed to overcome critical dimensions and pattern placement errors caused by thermal expansion in the conventional nanoimprint lithography (NIL) process. We propose RT-NIL using hydrogen silsequioxane (HSQ) instead of the poly(methylmethacrylate) used in conventional NIL. We demonstrate HSQ-replicated patterns with a 90 nm diameter hole and 50 nm linewidth for room-temperature replications. Furthermore, we have developed new nanotransfer printing technology utilizing the adhesion characteristics of HSQ. We also demonstrate the transfer of photoresist and Au Patterns from a mold to a substrate. (C) 2003 American Vacuum Society.