The dc performances of an interesting InP/InGaAs tunneling-emitter bipolar transistor (TEBT) with double heterostructures are studied and demonstrated. The studied device has a higher breakdown voltage than conventional InP single heterojunction bipolar transistors between the collector and base. The, base-collector junction breakdown voltage V-BR UP to 15.6 V is obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Furthermore, low variations of dc current gains are found as the temperature is increased from 25 to 175 degreesC. The elimination of knee shaped characteristics and near unity ideality factors of collector and base currents (eta(C) and eta(B)) are obtained due to the use of a delta-doping sheet and spacer layer. In addition, the studied TEBT device has a stable dc current gain distributed regime as the temperature is increased from 25 to 175 degreesC. (C) 2003 American Vacuum Society.