With a spin-coating technique, ferroelectric thin films of poly(vinylidene fluoride-trifluoroethylene) copolymer [P(VDF-TrFE; with a content (mol %) ratio of 68/32 vinylidene fluoride /trifluoroethylene] were fabricated on silicon wafers covered with platinum and were doped with a nucleation agent, diethyl phthalate (DEP). The remnant polarization of copolymer thin films increased 70% after doping with DEP, and the coercive field was reduced, which is highly desirable in bistable memory devices. The dielectric constant of thin films also increased after doping. However, the effect of doping on the ferroelectric response was not remarkable in freestanding copolymer films. The results demonstrated that the ferroelectric dipole orientation in P(VDF-TrFE) thin films was significantly enhanced by the presence of DEP because the crystallinity of thin films decreased after doping, as revealed by X-ray results. The dopant DEP acted as both a nucleation agent during the crystallization process and a plasticizer in the noncrystalline regions, which greatly enhanced the dipole orientation. (C) 2003 Wiley Periodicals, Inc.