Journal of Chemical Physics, Vol.118, No.6, 2853-2864, 2003
Energy transfer and device performance in phosphorescent dye doped polymer light emitting diodes
Singlet and triplet-triplet energy transfer in phosphorescent dye doped polymer light emitting devices were investigated. Poly(N-vinylcarbazol) and poly[9,9'-di-n-hexyl-2,7-fluorene-alt- 1,4-(2,5-di-n-hexyloxy)phenylene] (PFHP) were selected as the host polymer for the phosphorescent dopants fac-tris(2-phenylpyridine) iridium(III) [Ir(ppy)(3)] and 2,3,7,8,12,13, 17,18-octaethyl-21H,23H-porphyrin platinum(II) (PtOEP) because of their high triplet energy levels and long phosphorescence lifetimes. In case of PVK film, efficient triplet energy transfers to both PtOEP and Ir(ppy)(3) were observed. In contrast, the triplet energy transfer did not occur or was very weak from PFHP to both PtOEP and Ir(ppy)(3) although usual requirements for triplet energy transfer were satisfied. Furthermore, the singlet-singlet energy transfer did not take place from PFHP to Ir(ppy)(3) in doped films even though the Forster radius is more than 30 Angstrom. However, the blended film of Ir(ppy)(3) with PFHP and PMMA showed the green emission from Ir(ppy)(3) via singlet energy transfer. In addition, the solution of PFHP and Ir(ppy)(3) (8 wt. %) in p-xylene also showed green emission. The blocking of the energy transfers in the phosphorescent dye doped PFHP films is found to be originated from the formation of aggregates which is evident from the microscopic images taken by transmission electron microscope, atomic force microscope, and fluorescence microscope. The formation of aggregates prevents dopant molecules from being in close proximity with host molecules thereby inhibiting energy transfer processes. The phase separation deteriorates the device performance also. Therefore, the chemical compatibility of a dopant with a host polymer as well as conventional requirements for energy transfers must be significantly considered to fabricate efficient phosphorescent dye doped polymer light emitting devices. (C) 2003 American Institute of Physics.