The growth kinetics of anodic films formed on the surface of high purity Al by anodization under galvanostatic conditions at current densities in the range 5-75 mA cm(-2) in thermostatically controlled and vigorously stirred solutions of chromic, sulfuric, phosphoric, citric, tartaric and oxalic acids at different temperatures, were studied. It has been shown that chromic acid solution produces a typical barrier type oxide growth at any given temperature, while the specific kinetic curve representing the combined barrier/porous type film growth is observed when the anodization process is carried out in a nonstirred chromic acid solution. The oxide growth in the rest of the anodizing solutions occurs in different ways depending on the bath temperature. Barrier oxide growth is observed at temperatures lower than 30degreesC. Above this temperature, combined barrier/porous oxide growth is observed. In all cases, the slope of the linear part of the potential against time curves, and therefore the rate of barrier oxide growth, increases with increasing anodizing current density and acid concentration, while it decreases with increase in temperature. The composition and surface morphology of the anodic films have been studied by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM).