The effect of low temperature annealing prior to laser annealing on n(+)/p junction characteristics was investigated. A sample annealed at 400degreesC for 10 min before laser annealing showed a significant reduction in defect density which, in turn, improved junction characteristics such as low resistance, low junction leakage current, and less phosphorus deactivation during subsequent high temperature annealing. Cross-sectional transmission electron microscopy analysis confirmed that defects induced by plasma doping were effectively removed by preannealing followed by laser annealing. A preannealing prior to a laser annealing process represents a promising technology for future ultrashallow junction applications.