We have investigated an alternative electron-beam crystallization method for poly-Si thin-film transistor application. In contrast to the high crystallization temperature and long duration of conventional furnace crystallization, electron-beam crystallization could be performed at a low thermal budget even without substrate heating. It also provides better device characteristics than conventional furnace annealing, including smaller threshold voltage, higher mobility, smaller subthreshold swing, and larger I-ON/I-OFF ratio. The much smoother surface than the excimer laser annealed sample is also important for further gate oxide integrity and device performance improvement.