It had been reported that liquid-phase deposition (LPD) using saturated hydrofluosilicic acid (H(2)SiF6) is useful for silicon metal-oxide-semiconductor (MOS) solar cells. However, the LPD preparation time is long. In this work, anodic oxidation in saturated H2SiF6 solution is proposed as an alternative method to grow the room temperature oxides for MOS solar cells. It was found that the oxide preparation time is reduced significantly without sacrificing the efficiency in comparison with that by the LPD method. The oxide prepared by anodization (ANO) in H2SiF6 was found to be deposition-like which is different from that by ANO in H2O. The oxidation time is about 5 min for the ANO method, but it is up to 4 h for the LPD method to obtain about 50 Angstrom thick oxide. After adding intercathode semitransparent thin Al film between thick Al cathode lines, it is apparent that all performances of the solar cells are improved. The reliability and efficiency of solar cells can also be improved above the 200degreesC, 5 min postmetalization annealing treatment, and a conversion efficiency of 9.5% is shown.