Cu-doped p-type CdTe thin films have been electrodeposited at -0.35 V vs. Ag/AgCl from a sulfuric acid solution of pH 1 containing 0.1 M CdSO4, 1 mM TeO2, and various concentrations of CuSO4. Deposited films were annealed at 350degreesC under N-2 flow. The films were characterized with X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and a reflectance meter. The resistivity and the carrier concentration of the films were measured using the van der Pauw method and Hall effect measurement. This is the first study to investigate the effect of the CuSO4 concentration on the composition, the crystallinity, and the electric properties of Cu-doped CdTe films prepared by electrodeposition. The conductivity of the CdTe films linearly increases by 0.14-104.5 S/cm, and the hole concentration [log(h/cm(3))] increases from 17.3 to 20.0 as the CuSO4 concentration rises from 1 x 10(-7) to 10(-5) M.