A lower-temperature process for the deposition of silicon dioxide was developed in a hot-wall, single-type chamber, using a gaseous mixture of SiH4 and N2O. The deposition rate was measured as a function of deposition temperature, pressure, and SiH4/N2O flow-rate ratio. At fixed SiH4/N2O, two types of silicon dioxide, which had the same deposition rate, were deposited. One was deposited at low temperature (700 degreesC) and high pressure (20 Torr), and the other was deposited at high temperature (850 degreesC) and low pressure (2.5 Tort). The film characteristics of the two types of silicon dioxide were compared. The results revealed that the low-temperature film exhibited similar characteristics to those of the high-temperature film. Therefore, the current high-temperature process can be replaced by a low-temperature process to achieve low thermal budget in semiconductor device processing.