As the plasma etch processes have evolved, the wet cleaning process has included resist stripping, sidewall polymer removal, and also encompasses surface cleaning, which can include mobile ion reduction and damaged metal removal. This scenario has ushered in the recent popularity of fluoride based semiaqueous cleaning (SAC) chemistries for postmetal etch cleaning. These chemicals can include low or room temperature operation and very short process times, are easily rinseable in water, and are easy to dispose of. This study looks at the effects of cleaning metal and via structures with SAC(TM) chemistries. The primary focus is on metal integrity when looking at: (1) process latitude of the cleaning chemicals; (2) the effect of de-ionized water rinsing; and (3) the effect of utilizing different intermediate rinses. This study shows that an emphasis should now be placed on total process optimization. This not only includes the cleaning chemistry, but also the rinsing process, which had historically not been a focus item.