ddWe explored the electrical and dielectric properties of yttrium barium copper oxide ( YBa2Cu3O6+x) with different oxygen content. The aim was to perform a study of the annealing conditions using a pulsed laser annealing (PLA) system to obtain optimum temperature coefficient of resistance (TCR) for bolometric structures and low loss tangent for pyroelectric structures without causing a thermal damage to the underlying layers. Oxygen content of samples was changed by annealing with an excimer laser (lambda = 248 nm) at different power levels and pulse number under high vacuum. X-ray diffraction patterns of these samples were taken to examine the level of crystallization. We observed different crystallization levels for different annealed samples. For bolometric samples, semiconducting YBaCuO chin films were deposited by rf sputtering at room temperature on oxidized Si wafers. The films were amorphous to polycrystalline as deposited. PLA was performed on the samples at varying number of pulses from 100 to 300 at two power levels of 20 and 25 mJ/cm(2). The purpose was to decrease the oxygen content of the samples. thus making them more resistive with higher TCR, while simultaneously increasing the long range atomic order and hence crystallinity. For dielectric properties, the samples were fabricated following the model of a capacitor. 2000 Angstrom YBaCuO was sandwiched between two 3000 Angstrom Nb electrodes with an effective area 7.35 X 10(-4) cm(2) in contact with the substrate. The annealing was done with 50 pulses at power levels of 25 and 40 mJ/cm(2). Our aim was to achieve a small loss tangent through PLA, thus decreasing the amount of power dissipated in the capacitor for pyroelectric detection applications, Capacitance and resistance measurements were done at different temperatures to calculate the loss tangent.