Maskless selective area cw Nd:YAG laser annealing of GaInAsP/InP quantum well (QW) structures has been investigated as a possible route towards the fabrication of monolithically integrated photonic circuits. Laser irradiation of a 5 QW laser structure, originally designed for lasers emitting at 1.52 mum, yielded material having a continuously changing band gap ranging from 1.52 to 1.4 mum over the distance of about 3 mm. Bars with arrays of ridge waveguide lasers, having cavity lengths from 300 to 600 mum, were fabricated from the processed material. An individual bar, 2-3 mm long, comprised lasers operating typically between 1.4 and 1.52 mum. The lasers showed stable threshold current density and high quantum efficiency at all operating wavelengths. The results indicate that the applied approach has the potential to realize the cost-effective fabrication of advanced photonic devices and photonic integrated circuits.