고주파 열 플라즈마에 의한 다이아몬드 합성

박현; 박동화

HWAHAK KONGHAK, Vol.34, No.2, 178-182, April, 1996

Export Citation

고주파 열 플라즈마에 의한 다이아몬드 합성

Diamond Synthesis by the R.F. Thermal Plasma

박현, 박동화

초록

대기압하에서 고주파 열 플라즈마로 메탄과 수소기체의 화학적인 반응을 이용하여 몰리브덴 기판위에 다이아몬드를 합성하였다. 고주파 열 플라즈마에 의한 다이아몬드 합성에는 수소에 대한 메탄의 유량비와 기판의 온도가 중요한 인자였다. 본 연구에서는 메탄의 유량비 변화(0.2-4%)와 기판온도 변화(800-1000℃)에 실험을 수행하였다. 기판의 온도는 광학온도계(optical pyrometer)를 사용하여 측정하였다. 메탄 유량비 0.5%, 기판온도 1000℃일 때 결정성 및 밀도가 우수한 다이아몬드가 합성되었다. 또한 메탄의 유량비 및 기판온도가 증가할수록 구형 입자들이 관찰되었다. 반응 원료로서 메탄 대신에 유기 액상 전구체인 에탄올을 사용하여 실험을 행하였으며, 분석결과 에탄올의 유량이 0.1ml/min일 때 우수한 다이아몬드가 확인되었다.

Diamond was synthesized on molybdenum substrate by chemical reaction of CH₄ and H₂ using the RF thermal plasma. The main factors of the diamond synthesis are the CH₄/H₂ ratio and the substrate temperature. Experiments were carried out by changing the CH₄/H₂ ratios from 0.2% to 4% and by changing substrate temperature from 800℃ to 1100℃. The substrate temperature was measured by the optical pyrometer. Diamond which has good crystallinity and high density was synthesized, when substrate temperature was 1000℃, and CH₄/H₂ ratio was 0.5%. Ball-like type was observed by increasing CH₄/H₂ ratio and the substrate temperature. Diamond was synthesized by using the organic liquid precursor, ethanol instead of methane and good quality diamond was synthesized when the flow rate of ethanol is 0.1ml/min.

Keywords:Thermal Plasma;Diamond;Methane;Ethanol

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[1] Bundy FP, Hall HT, Strong HM, Wentorf RH, Nature, 176, 51 (1955)

[2] Mitsubishi Metal Corp.: Japanese Pat. Appl. JP60/201879A2, Oct. 12 (1985)

[3] Nippon Telegraph Telephone Public Corp.: Japan Patent, Appl. JP6070, 178, April 20 (1985)

[4] Stan H, Ind. Diamond Rev., 44, 249 (1984)

[5] Aida H, Yamaguchi K, Japan Patent, 86,226,290 Oct. (1986)

[6] Fujimori N, Doi A, Japan Patent, 86,251,120 Nov. 8 (1986)

[7] Shohata N, Fuji K, Japan Patent, 86,240,629 Oct. 25 (1986)

[8] Sumitomo Electric Industries Ltd.: Japan Patent, 581/147087, Sep. 1 (1983)

[9] Sumitomo Electric Industries Ltd.: Japan Patent, 60/57993 (1985)

[10] Sumitomo Electric Industries Ltd.: Japan Patent, 59,208,821, Nov. 27 (1984)

[11] Doi A, Fujimori N, Japan Patent, 60,246,627, Dec. 6 (1985)

[12] Hithchi Ltd.: Japan Patent, 58/204534, Nov. 27 (1983)

[13] Matsumoto S, Hino M, Kobayashi T, Appl. Phys. Lett., 51(10), 737 (1987)

[14] Girshick SL, Li C, Yu BW, Han H, Plasma Chem. Plasma Process., 13(2), 169 (1993)

[15] Kawato T, Kondo K, Jpn. J. Appl. Phys., 26, 1429 (1987)

[16] Paik SH, Chen X, Kong P, Pfender E, Plasma Chem. Plasma Process., 11, 229 (1991)

[17] Saito Y, Sato K, Tanaka H, Fujita K, Matuda S, J. Mater. Sci., 23, 842 (1988)