대기압하에서 비평형 플라스마 생성과 산화아연(ZnO)박막의 식각에의 응용

이봉주; Bong Ju lee

HWAHAK KONGHAK, Vol.40, No.5, 592-595, October, 2002

Generation of Non-Equilibrium Plasma Under Atmospheric Pressure and Its Application to Etching Processes of Zinc Oxide Films

이봉주^†

조선대학교 자연과학대학 물리화학부, 광주 501-759

Bong Ju lee^†

Division of Physics and Chemistry, College of Nature Science, Chosun University, Gwangju 501-759, Korea

E-mail:

초록

대기압 하에서 정상적으로 저온 플라스마가 발생 가능한 장치를 개발했다. 본 장치는 한쪽의 전극(애노드)에 유전체(알루미나)를 피복하여 평행하게 배치한 구조이다. 전극간 유전체의 비유전율이 방전특성에 영향을 주는 효과를 검토하기 위해서 탐침법, 발광분광법에 의해 특성을 검토했다. 그 결과, 전자온도>여기온도>진동온도>기체온도의 관계가 있는 비평형상태의 플라스마이었다. 또한, 본 장치를 이용하여 산화물 ZnO 박막의 식각에도 적용해 보았다.

Under atmospheric pressure, an apparently homogeneous and stable plasma can be generated from an insulator barrier rf plasma generator of which contains an rf powered cathode and a grounded anode covered with a dielectric insulating material. This is a structure in which the dielectric materials are covered and arranged in parallel in the one side of electrode. In order to characterize the generating plasma under atmospheric pressure, some basic characteristics have been evaluated by the Langmuir probe method as well as by optical emission spectroscopy. From the result of plasma characteristics, the generated plasma was verified to be non-equilibrium; T(electron)>T(excitation)>T(vibration)>T(gas). We tried to apply this to etching of an Zinc oxide(ZnO) films also.

Keywords:Generation of Low Temperature Plasma;SnO2 Etching;Atmospheric Pressure;Plasma Etching;Relative Dielectric Constant

[References]

Elliason B, Hirth M, Kogelschatz U, J. Phys. D: Appl. Phys., 20, 1421 (1987)
Elliason B, Kogelschatz U, Appl. Phys. B-Lasers Opt., 46, 299 (1988)
Laflamme AK, Rev. Sci. Inst., 41, 1578 (1970)
Minami T, Nanto H, Tanaka S, Jpn. J. Appl. Phys., 24, L287 (1988)
Nakata T, Okubo Y, Kunioka A, Jpn. J. Appl. Phys., 30, 3344 (1992)
Bleekrode R, vanBenthem W, J. Appl. Phys., 40, 5274 (1964)
Clay KJ, Speakman SP, Amaratunga GAJ, Silva SRP, J. Appl. Phys., 79, 7227 (1996)

[1] Elliason B, Hirth M, Kogelschatz U, J. Phys. D: Appl. Phys., 20, 1421 (1987)

[2] Elliason B, Kogelschatz U, Appl. Phys. B-Lasers Opt., 46, 299 (1988)

[3] Laflamme AK, Rev. Sci. Inst., 41, 1578 (1970)

[4] Minami T, Nanto H, Tanaka S, Jpn. J. Appl. Phys., 24, L287 (1988)

[5] Nakata T, Okubo Y, Kunioka A, Jpn. J. Appl. Phys., 30, 3344 (1992)

[6] Bleekrode R, vanBenthem W, J. Appl. Phys., 40, 5274 (1964)

[7] Clay KJ, Speakman SP, Amaratunga GAJ, Silva SRP, J. Appl. Phys., 79, 7227 (1996)