Aluminium films with thicknesses of 30-650 nm were deposited on unheated glass substrates by electron beam evaporation. The deposition rate was controlled at 10 and 33 nm/min, respectively. The structural, impure and electrical properties of aluminium films were studied by using atomic force microscopy, Auger electron spectroscopy and by measuring resistivity. The grain size of aluminium film apparently increases and the roughness of the film surface decreases from 2.5 to 1.5 nm with increasing deposition rate. Oxygen as main impurity is detected inside the film and its amount slightly decreases with increasing deposition rate. The resistivity of the films decreases from 5 x 10(-7) to 3 x 10-8 Omega m as the deposition rate increases from 10 to 33 nm/min. It is considered that the increasing in deposition rate weakens the influence of residual gas atoms on the growing film, resulting in the increase in grain size and the decrease in resistivity of the aluminium film.