While providing a general overview over the current status of self-organization of quantum islands in the II-VI semiconductor system, with the main focus on CdSe embedded in ZnSe, this paper shall give an introduction to the possibilities opened by a modification of the standard growth technique. In molecular beam epitaxy, we have substituted the generally used Cd-elemental source with a CdS-compound source. The sulfur is usually not included in the growing layer. However, its presence can be surfactant-like while the elevated Cd-temperature of the dissociated CdS leads to changed thermodynamic conditions on the growth front. Using migration enhanced epitaxy, nearly perfect quantum wells with respect to lateral homogeneity can be obtained by suppressing the inherent Cd segregation and clustering. These processes are generally responsible for the formation of small islands (SI) (lateral diameter 3-5 nm) even when not attempting to grow island like structures. The suppression of these SI was a first step to gain control over the island formation. Larger islands with central Cd concentrations above 40% are more of interest for device applications, since a population at room temperature is necessary. In particular, high-density systems are required. Using the modified growth mode, well correlated, stacked island systems were obtained. Their outstanding structural and optical properties will be discussed in detail. The absence of a closed wetting layer in the CdSe/ZnSe system and the appearance of island like structures, even at submonolayer nominal deposition, further corroborate the assumption that island formation does not readily occur in a standard Stranski-Krastanow growth mode, which is assumed for InAs/GaAs.