Effects of growth parameters such as plasma intensity, flow rate, composition of reactant gases. growth temperature, and hole size on the selective area growth (SAG) of carbon nanotubes (CNTs) were investigated using the triode type field emission array structure in plasma enhanced chemical vapor deposition (PECVD) system. As the plasma intensity was increased, the diameter of CNTs was reduced from 180 to 90 nm, but the growth rate was promoted. With an increase in the NH3 flow rate, the average diameter of CNTs was decreased due to the enhanced etching effect by NH3. An increase in the total flow rate of reactant gases reduced the growth rate of CNTs, but the average diameter of CNTs remained nearly constant. An increase in growth rate and diameter was observed at higher growth temperatures. As the hole size of the triode structure increased, the growth rate of CNTs gradually decreased because of the reduced lateral diffusion of reactant species into the hole.