PECVD (plasma enhanced chemical vapor deposition) technology has been used for the deposition of amorphous SiC films onto single crystal silicon substrates at temperatures below 300 degreesC. Laser annealing was carried out for the a-SiC (amorphous silicon carbide) films using UV (ultra violet) and IR (infrared) lasers simultaneously to get crystalline film structures. From topographies of AFM (atomic force microscopy) of the laser-annealed films, a lot of cubic structures were observed on the surface, which indicates the existence of polycrystalline structures. Results of SEM (Scanning Electron Microscopy), FTIR (Fourier transform infrared), and XRD (X-ray diffraction) measurements show formations of SiC polycrystals through a structure re-ordering by laser treatment.