Materials Research Bulletin, Vol.36, No.11, 1939-1947, 2001
Effect of CuO additive on sintering and microwave dielectric behavior of LaAlO3 ceramics
The dielectric properties and the microstructures of LaAlO3 ceramics with CuO additions (0.25-1 wt%) have been investigated. The sintered LaAlO3 ceramics are characterized by X-ray diffraction spectra and scanning electron microscopy (SEM). The ceramic samples show that a dielectric constant (epsilon (r)) of 19-22 and a Q X f value of 5000-48,000(at 9.7 GHz) can be obtained at low sintering temperatures of 1370-1460 degreesC. The temperature coefficient of resonant frequency varies from -50 to -80 ppm/degreesC. At the level of 0.5 wt% and I wt% CuO additions, low Q X f value of the LaAlO3 ceramics is owing to the formation of the second phase LaAl11O18. With CuO addition, an 100-200 degreesC reduction in sintering temperature can be achieved for the LaAlO3 ceramics.