Microcrystalline silicon ( muc-Si) thin films were deposited by electron cyclotron resonance-chemical vapor deposition (ECR-CVD) on single crystal silicon (c-Si) and glass substrates at temperatures of 325 and 465 degreesC. The films and the interfaces were characterized by scanning and transmission electron microscopy (SEM, TEM), On c-Si substrates local initial epitaxial growth was observed, on glass substrates an amorphous interlayer is found for films deposited at 325 degreesC. It is shown that using this deposition technique and proper choice of the deposition parameters (high substrate temperature, low deposition rate) the initial growth of an amorphous film can be avoided.