Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C5H7O2)(2) as Zn source. The deposited thin ZnO layers of similar to0.1 mum thickness on Si and InP semiconductor substrates, have been investigated with respect to the crystalline phase by X-ray diffraction (XRD), and surface morphology by atomic force microscopy (AFM). Spectrophoto metric measurements in the ultraviolet-visible-near infrared spectral range and optoelectrical measurements of ZnO /semiconductor heterostructures have been performed.