The case for thin-film silicon as one of the main future options for cost-effective photovoltaic solar cells is outlined. The limitations of present amorphous silicon (a-Si:H) solar cells are briefly mentioned. Hydrogenated microcrystalline silicon (muc-Si:H) deposited by PECVD (plasma-enhanced chemical vapor deposition) at low substrate temperatures (approx. 200 degreesC) constitutes a new and additional possibility for solar cells. Properties of intrinsic muc-Si:H layers deposited by PECVD at VHF (very high frequency) excitation frequencies are listed, together with the necessary conditions for obtaining device-grade material. Performances obtained so far with muc-Si:H solar cells are given: the latter are compared with estimated limits for pn- and pin-type devices with E-g = 1.1 eV, Finally, present performances and future perspectives for 'micromorph' (muc-Si:H/a-Si:H) tandem solar cells are discussed.