We report results of photoluminescence (PL) of GaSb self-assembled quantum dots grown by metalorganic chemical vapor deposition on GaAs substrates. We examined the emission from dots with average height of (5+/-0.3) nm, width of (38+/-2) nm, and density of 1.3 X 10(10) cm(-2). We found the PL emission from quantum dots at 1.08 eV and from the wetting layer at 1.40 eV. The quantum dot peak energy is almost constant in the temperature range of 10-80 K suggesting that the interdot tunneling effects are insignificant. The emission from quantum dots is thermally more stable than the wetting layer emission. The results are in agreement with those commonly reported for molecular beam epitaxy grown samples.