We activated 200 nm thick arsenic, phosphorous, and boron-doped crystalline silicon (c-Si) at 1100degreesC and examined the time dependence of the resistance of the layers with respect to subsequent processing steps at lower temperatures. The resistance of the doped c-Si layer does not change over time for a dose of 5x10(13) cm(-2). For the higher dose of 1x10(16) cm(-2), however, the resistance increases with time and finally saturates. The onset time for this resistance increase is independent of temperature in the high-temperature regime, while it depends on temperature in the low-temperature regime. Our proposed model explains the overall resistance increase of c-Si layers, doped with different impurities, by changing the corresponding parameters in function of the doping impurity.