Alternating current (AC) experiments have been carried out from room temperature up to 500 degreesC in order to obtain dielectric properties of Al2O3 amorphous films deposited by ultrasonic spray pyrolysis. Temperature-dependent complex impedance of the films studied results in classically shaped spectra, Up to 300 degreesC, this shows a single relaxation process described by a non-largely depressed semicircle. as in single-phase material. Above this temperature, a second relaxation process arises due to spatial charge accumulation in the vicinity of the electrode region. Bulk electric characteristics were determined proposing equivalent circuits constituted by resistive (R) and capacitive (C) elements. A current-fitting routine has permitted an acceptable calculation of these parameters. The dielectric constant was determined as a function of the temperature and frequency and it was found to be constant for a wide range of frequencies. The dependence on frequency and temperature of the total sigma (1)(omega ,T) conductivity was also investigated. The temperature dependence of sigma (1)(omega ,T) shows a wide region where it is almost temperature-independent. Using frequency-dependent conductivity results. it was established that a jump-charge carrier mechanism is the principal responsible for electrical conductivity in these films. This mechanism involves both electronic and ionic charge carriers, and follows the Jonscher power law. sigma (1)(omega ,T) = sigma (0) +A omega'. We report the temperature dependence of the A and s parameters.