Deposition and characterization of TiNi shape memory alloy thin films were performed using a DC magnetron sputter deposition technique. As-deposited TiNi thin films were found to exhibit an amorphous structure, which crystallized upon heat treatment at 550 or 600 degreesC. An uncommon dependence of the deposition rate on the deposition pressure was observed. Dependence of composition on the deposition pressure was also determined. The crystallization behavior of amorphous TiNi thin films was found to be different from that of bulk TiNi. The activation energies for the crystallization of the resulting TiNi thin films were calculated and found to be higher than that of bulk TiNi.