AgInTe2 films have been grown by a hot wall epitaxy technique onto KCI substrates kept at different temperatures in a vacuum of 1.3 X 10(-3) Pa. Experimental conditions were optimized to obtain better crystallinity in the films. The films thus prepared were studied for their electrical conductivity, Hall mobility, carrier concentration, as well as structural and optical properties. Observations reveal that the electrical conductivity and carrier concentration of films increases with increasing temperature of the substrate during deposition, while the Hall mobility decreases. The results indicate that the films are p-type, thus indicating holes as dominant charge carriers. The scanning electron micrographs of the films show an increase in grain size with increasing substrate temperature. Analysis of optical absorption studies on the films indicate the band gap energies lie in the range 1.12-1.26 eV