Enhanced electroluminescence (EL) from vapor deposited p-sexiphenyl (6p) layer has been observed utilizing heterostructure of p-sexiphenyl emissive layer and N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) hole transporting layer. The device emits blue light centered at 420 nm, and the EL intensity reaches as high as 3,400 cd/m(2) at an applied voltage of 10 V. The heterostructure device emits 2 orders of magnitude higher intensity than the conventional single layer device.