Interference lithography (IL) was used to pattern sputtered Co/Cu/NiFe layers into large-area arrays of pseudo-spin valve (PSV) elements. In order to precisely control size, aspect ratio, and shape uniformity of the elements, three methods of increasing complexity were developed. Pattern transfer was achieved by reactive-ion etching and ion milling, and was found to maintain the multilayered structure of the PSV film. The switching field of the PSV elements, and the remanent state, varied with the aspect ratio as expected. Furthermore, IL was employed to fabricate magnetic random access memory-type structures. Both sense and word lines were conductive, and the buried PSV elements had similar magnetic properties to PSV elements patterned in large-area arrays.