Fluoropolymers were characterized for 157 nm lithography resist. We obtained superior optical transparencies, with absorption coefficient of 0.01-2 mum(-1) at 157 nm wavelength. The resists based on the fluoropolymers characterized exhibited suitable dissolution behavior into alkaline developer of 0.26 N tetramethylammonium hydroxide solution. Dry-etching resistance of the resist film showed the almost equivalent to conventional ArF resist based on an acrylic polymer. The lithographic evaluation showed that high sensitivities of 1.0-10.0 mJ/cm(2) for 157 nm exposure, and high dissolution contrast. Furthermore, the resolution capability of 95 nm lines and spaces was obtained with proper pattern profiles. These results indicate that 157 nm resist based on fluoropolymers we characterized have enough potential for practical use of 157 nm lithography.