Extreme ultraviolet lithography (EUVL) is the leading candidate for next generation lithography with the potential for extendibility beyond the 50 nm node. Selecting the proper materials for the absorber stack directly impacts one's ability to conduct effective electron beam patterning, focused ion beam repair, and inspection of an EUVL reticle. An attempt to define the optimal absorber stack based on the interaction of electrons, ions, and photons with the absorber stack is studied from the perspective of patterning, repair, and inspection of EUVL reticles, respectively.