The TaSiN barrier layers for Pt/TaSiN/poly-Si structure were prepared by dc reactive magnetron sputtering. The resistivity of as-deposited films with an optimum composition of Ta0.23Si0.29N0.48 was about 1,277 mu Omega cm. The TaSiN films are amorphous over a wide range of annealing temperatures up to 900 degreesC and showed an abrupt increase of resistivity at annealing temperatures of 700 and 750 degreesC because of the formation of TaSiNxOy amorphous phase onto TaSiN films. The I-V characteristics of Pt/TaSiN/poly-Si structure before and after annealing at various temperatures became linear, which is indicative of Ohmic characteristics, independent of annealing temperature. The contact resistivities of Pt/TaSiN/poly-Si structures with increasing annealing temperature up to 700 degreesC did not vary greatly compared with those of as-deposited electrode structures. The specific contact resistivities of as-deposited and annealed structures at 700 degreesC were about 2.5 x 10(-3) and 5.6 x 10(-3) Omega cm(2), respectively.