Distributed Bragg reflectors (DBRs) with different numbers of periods were grown by molecular beam epitaxy from ZnxCdyMg1-x-ySe-based materials on InP substrates. The alternating ZnCdSe/ZnCdMgSe layers were symmetrically strained to the InP substrate greatly simplifying the growth process and increasing the uniformity. High crystalline quality was also achieved in these structures. A maximum reflectivity of 99% was obtained for a DBR with 24 periods. Chlorine doped (n-type) DBRs were grown and their electrical and optical properties were investigated. Electrochemical capacitance-voltage profiling indicated that the doping concentrations of the ZnCdSe and ZnCdMgSe layers were 4 X 10(18) and 2 X 10(18) cm(-3), respectively. The reflectivity of the doped DBR structures was comparable to that of the undoped ones.