In this article, the laterally tunneling diodes and triodes were fabricated with the general second polysilicon layer surface micromachining process. The thickness of each structural polysilicon and sacrificial phosphosilicate glass layer was 2 mum, respectively. By removing the sacrificial layer with the sublimation drying method, the stiction was avoided. Their emission characteristics were tested in a high vacuum chamber with probes. Current-voltage characteristics were tested under various vacuum environments and the simulation was done to know the electric field distribution near the tip end. They were then used as a vacuum level evaluation sensor. The sensor showed the emission current variation in the range of 1.20-2.42 muA for the vacuum range of 10(-5)-10(-8) Torr.