The etching characteristics of SiO2 thin films were tested in plasmas fed with CH2F2 (.) CHF2CHF2, and CF3CH2F in mixture with oxygen. The research was aimed to replace conventional perfluorocompounds with new compounds with lower impact on global warming. SiO2 etch rate and selectivity to Si as well as x-ray photoelectron spectroscopy surface composition of treated surfaces and anisotropy have been investigated.