Nanostructures such as continuous Ge lines about 5 nm in width and 2 nm in height were created on Ge wetting layers on Si(lll) substrates with a scanning tunneling microscope (STM). Postfabrication annealing initiated growth of the lines in the lateral dimension thereby improving their uniformity. STM and electron diffraction data obtained for lines after annealing showed that the lines have a nonepitaxial structure consisting of tiny particles. Continuous intersections of lines can be achieved when sharp tip apexes are used. The results demonstrate the possibility of using the STM for direct massive transfer of individual atoms in the fabrication of nanostructures.