Nanostructured diamond films were deposited on the etched silicon wafer by using dielectrophoresis method. The properties of the film were analyzed using scanning electron microscopy and micro-Raman spectrometry. Their field emission behavior was studied using an anode probe technique. A current density of 5 mA/cm(2) was recorded at a field of 3.56 MV/m. This effect is attributed to the field enhancement at the rough silicon-diamond interface and the lower or even negative electron affinity of the diamond surface.