Growth of NiO films was examined on various crystal faces of GaAs by using a single electron bombardment source. Use of alkali halide buffer layers achieved good quality of epitaxial. growth on GaAs (001). Electron spectroscopies (Auger electron spectroscopy, ultraviolet photoelectron spectroscopy, electron energy loss spectroscopy) revealed that the grown NiO film has almost the same electronic structure as bulk NiO. This method helps integration of 3d transition-metal oxides on technologically important materials such as GaAs or Si.