We have studied the characteristics of reactive ion etching for zinc telluride using CH4 and H-2 crases. The effects of CH4/H-2 gas composition, total gas pressure, and plasma power on the etching properties were investigated. It was found that variation of the CH4 concentration in gas mixtures leads to changes in both the etching rate and the surface morphology. The etching rate of ZnTe increases from 128 to 629 Angstrom /min with increasing the plasma power from 50 to 300 W at a 4% CH4 concentration and 25 Pa pressure. A smooth etched ZnTe surface was obtained in the range of 4%-16% CH4 concentration and 10-65 Pa. pressure.