The angular dependence of the profile broadening of Na, Li, and F during secondary ion mass spectrometry depth profiling was investigated in either n- or p-type Si using 10 keV O-2(+) or N-2(+) bombardment. The electric field-induced segregation of Na and Li at the SiO2/Si interface increased exponentially for O-2(+) bombardment below similar to 27 degrees, whereas a N-2(+) beam provided better depth resolution. The N-2(+) beam-induced profile broadening of Li was higher in the low resistivity n-type Si than in the high resistivity p-type Si for bombardment conditions producing a nitride layer at the surface. This behavior was characteristic of the field-induced segregation of Li at the SiNy/Si interface. Profiling below the critical angle for oxide formation resulted in the antisegregation of F into the SiO2 layer and Save sharper profiles. The decay length of F decreased exponentially with the surface charging of the SiO2 layer. By contrast, broader profiles were obtained under N-2(+) bombardment for the same impact angles.