TiN film was deposited on Si substrate by using an atomic layer chemical vapor deposition (CVD) system. In this system, the TiCl4 and NH3 gases were supplied, separately and Ar purge gas was added between the source and reactant gases to suppress the direct reaction. The microstructure of TiN was observed to be the columnar grain structure. The chemical species was analized by Auger electron spectroscopy (AES) and the C1 content in TiN film was detected below the detection limit of AES which was below 0.5%. The density of film grown at 450 degrees C measured by Rutherford backscattering spectroscopy was 4.85 g/cm(3) and decreased as the process temperature decreased. The resistivity of this TiN was about 75 mu Omega cm, which was very low compared to TiN film grown by other CVD methods. The step coverage of TiN film showed almost 100% conformality at 450 degrees C.