화학공학소재연구정보센터
Journal of Vacuum Science & Technology A, Vol.18, No.4, 1225-1229, 2000
Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology-scattering with angular limitation in projection electron beam lithography membrane
In scattering with angular limitation in projection electron beam lithography (SCALPEL) mask technology, the choice of membrane material is an important issue from the perspective of mask performance and manufacturing. Low-pressure chemical vapor deposition SiN has been widely employed for SCALPEL membranes because of its excellent manufacturability and other material properties. However, amorphous plasma enhanced chemical. vapor deposition SiC:H has a good potential for the membrane material, and we have developed an optimized process to deposit the SIC films for mask fabrication.